NTHL020N120SC1_V01

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos

NTBG020N120SC1_V01

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

NVBG020N120SC1_V01

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(typ.QG(tot)=220nC) •LowEffectiveOutputCapacitance(typ.Coss=258pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondleve

NVHL020N120SC1_V01

SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(typ.QG(tot)=203nC) •LowEffectiveOutputCapacitance(typ.Coss=260pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinte