丝印：NTHL060N090SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 900 V, 60 m, 46 A

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Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

文件：764.08 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-3L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • Typical RDSon\n• 60mΩ\n• Ultra Low Gate Charge (Qg tot)\n• 87nC\n• Low Effective Output Capacitance (Coss)\n• 113pF\n• 100% UIL Tested\n• RoHS Compliant;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

文件：764.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体