NTHL060N090SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecond

NTHL060N090SC1

Marking：NTHL060N090SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 900 V, 60 m, 46 A

NTHL060N090SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecond

NTBG060N090SC1

SiliconCarbide(SiC)MOSFET–60mohm,900V,M2,D2PAK-7L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(QG(tot)=88nC) •HighSpeedSwitchingwithLowCapacitance(Coss=115pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−F

NTBG060N090SC1

MOSFET-SiCPower,SingleN-Channel,D2PAK-7L900V,60m,44A

NVBG060N090SC1

MOSFET-SiCPower,SingleN-Channel,D2PAK-7L

NVHL060N090SC1

MOSFET-SiCPower,SingleN-Channel