Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

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Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 88 nC) • High Speed Switching with Low Capacitance (Coss = 115 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−F

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安森美半导体

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SOT-363

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SOT-363

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SOT-23-6

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