NTH4L020N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

NTH4L022N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV

NTH4L022N120M3S_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV

NTH4L023N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features TypicalRDS(on)=23m@VGS=18V UltraLowGateCharge(QG(tot)=69nC) HighSpeedSwitchingwithLowCapacitance(Coss=153pF) 100AvalancheTested ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onsecondlevelinterconnection) Appli

NTH4L025N065SC1

Silicon Carbide SiC MOSFET - 19 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=19m@VGS=18V Typ.RDS(on)=25m@VGS=15V •UltraLowGateCharge(QG(tot)=164nC) •LowCapacitance(Coss=278pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelin

NTH4L028N170M1

Marking：H4L028N170M1；Package：TO247-4L；Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features •Typ.RDS(on)=28m@VGS=20V •UltraLowGateCharge(QG(tot)=200nC) •HighSpeedSwitchingwithLowCapacitance(Coss=200pF) •100AvalancheTested •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •UPS •DC/DCConverter •BoostConverter

NTH4L028N170M1

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=40mΩ（TYP.）@VGS=20VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

NTH4L030N120M3S

Marking：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=29m@VGS=18V •UltraLowGateCharge(QG(tot)=107nC) •HighSpeedSwitchingwithLowCapacitance(Coss=106pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

NTH4L032N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L

Features •TypicalRDS(ON)=32m@VGS=18V •UltraLowGateCharge(QG(tot)=55nC) •HighSpeedSwitchingwithLowCapacitance(Coss=114pF) •100%AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection)

NTH4L032N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L

Features •TypicalRDS(ON)=32m@VGS=18V •UltraLowGateCharge(QG(tot)=55nC) •HighSpeedSwitchingwithLowCapacitance(Coss=114pF) •100%AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection)