丝印：NTHL160N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 160 m, 17 A

文件：236.88 Kbytes 页数：7 Pages

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安森美半导体

丝印：NTHL160N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 160 m, 17 A

文件：236.88 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos

文件：303.4 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：306.25 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：308.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost

文件：304.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：306.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：308.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体