Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

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ONSEMI

安森美半导体

ON/安森美
SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司

ON/安森美
SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司

ON/安森美
SOT-23-6

ON/安森美

上传：深圳市琅玥科技有限公司