丝印：NTHL080N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

文件：374.19 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：365.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NTHL080N120SC1A；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

文件：288.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

碳化硅 MOSFET，N 沟道，1200 V，80 mΩ，TO247−3L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • 1200V rated\n• Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：365.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：363.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：363.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

文件：374.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • High Speed Switching and Low Capacitance\n• Coss = 80pF\n• 1200V rated\n• Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A\n• 100% UIL Tested;

ONSEMI

安森美半导体