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首页>NTHL080N120SC1>详情
NTHL080N120SC1_ONSEMI/安森美半导体_Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L艾睿半导体
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产品属性
- 类型
描述
- 型号
:NTHL080N120SC1
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Single
- V(BR)DSS Min (V)
:1200
- VGS Max (V)
:25
- VGS(th) Max (V)
:4.3
- ID Max (A)
:44
- PD Max (W)
:348
- Ciss Typ (pF)
:1112
- Package Type
:TO-247-3LD
供应商
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