功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，20 A，190 mΩ，TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 35 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode)\n;

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丝印：NTHL190N65S3HF；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 m

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MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 190 m, 16 A

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MOSFET - Power, N-Channel, SUPERFET III, FRFET

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MOSFET ??Power, N-Channel, SUPERFET III, FRFET

文件：445.47 Kbytes 页数：10 Pages

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