丝印：NTMT190N65S3H；Package：TDFN4；MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 190 m, 16 A

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丝印：NTMT190N65S3HF；Package：Power88；MOSFET - Power, N-Channel, SUPERFET III, FRFET

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Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, Power88

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Fast switching performance with robust body diode\n• Low switching loss and higher system reliability\n• Ultra Low Gate Charge (Typ. Qg = 31 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.;

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Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, Power88

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Excellent body diode performance (low Qrr, robust body diode)\n• Higher system reliability in LLC and Phase shift full bridge circuit\n• Ultra Low Gate Charge (Typ. Qg = 34 nC)\n• Lower switching loss\n• Low Effective;

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