| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr 文件：357.1 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr 文件：356.49 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr 文件：357.1 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr 文件：356.49 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb− 文件：262.59 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印：H4L020090SC1；Package：TO247-4L；Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L Features • Typ. RDS(on) = 20 m @ VGS = 15 V Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inter 文件：331.89 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi 文件：362.96 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi 文件：362.12 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi 文件：362.12 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi 文件：362.96 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
650
- VGS Max (V)：
30
- VGS(th) Max (V)：
5
- ID Max (A)：
75
- PD Max (W)：
595
- RDS(on) Max @ VGS = 10 V(mΩ)：
27.4
- Qg Typ @ VGS = 4.5 V (nC)：
6
- Qg Typ @ VGS = 10 V (nC)：
259
- Ciss Typ (pF)：
7690
- Package Type：
TO-247-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ApexToolGroup/CooperTool |
新 |
48 |
全新原装 货期两周 |
询价 | |||
Apex Tool Group/Cooper Tools |
2022+ |
44 |
全新原装 货期两周 |
询价 | |||
Apex |
1824+ |
NA |
121 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
ON |
QFN |
1670 |
正品原装--自家现货-实单可谈 |
询价 | |||
ON |
24+/25+ |
2786 |
原装正品现货库存价优 |
询价 | |||
murata |
13+ |
NA |
21238 |
原装分销 |
询价 | ||
24+ |
3000 |
公司存货 |
询价 | ||||
ON |
09+ |
CASE120 |
5500 |
原装无铅,优势热卖 |
询价 | ||
ONSEMI |
2015+ |
SOT23-8 |
29898 |
专业代理开关IC,型号齐全,公司优势产品 |
询价 | ||
ON |
12+ |
1206-8 |
3000 |
询价 |
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