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NTHL1000N170M1

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Features Typ.RDS(on)=960m UltraLowGateCharge(typ.QG(tot)=14nC) LowEffectiveOutputCapacitance(typ.Coss=11pF) 100AvalancheTested RoHSCompliant TypicalApplications SolarInverters ElectricVehicleChargingStations ElectricStoringSystems SMPS(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL1000N170M1

SiC N-Channel MOSFET

FEATURES ·Typ.RDS(on)=960mΩ ·100AvalancheTested ·RoHSCompliant APPLICATIONS ·SolarInverters ·ElectricVehicleChargingStations ·ElectricStoringSystems ·UPS

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •LowEffectiveOutputCapacitance(Coss=50pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •LowEffectiveOutputCapacitance(Coss=50pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL160N120SC1_V01

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •LowEffectiveOutputCapacitance(Coss=50pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL160N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •LowEffectiveOutputCapacitance(Coss=50pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHS

NTC Thermistors, Surface Mount Chip

FEATURES •Extendedresistancevaluesavailableinstandardsizes •WraparoundNibarrierterminationswith100Sn •Allowsdesignflexibilityforusewithhybrid  circuitry •High-densitymonolithicconstructionwithglassovercoat •Sn90Pb10platedterminationsversionavailable •Compli

VishayVishay Siliconix

威世科技威世科技半导体

NTHS

NTC Thermistors, SMD 0402, 0603, 0805, 1206 Chip

FEATURES •Extendedresistancevaluesavailablein standardsizes •WraparoundNibarrierterminationswith 100Sn •High-densitymonolithicconstructionwith glassovercoat •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS Tempe

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    NTH

  • 功能描述:

    烙铁 Weller Chisel Tip For WMP Solder Penc

  • RoHS:

  • 制造商:

    Weller

  • 产品:

    Soldering Stations

  • 类型:

    Digital, Iron, Stand, Cleaner

  • 瓦特:

    50 W

  • 最大温度:

    + 850 F

  • 电缆类型:

    US Cord Included

供应商型号品牌批号封装库存备注价格
ApexToolGroup/CooperTool
48
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Apex Tool Group/Cooper Tools
2022+
44
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CANDD
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Apex
1824+
NA
121
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PULSE
23+
原厂原装
1012
优势库存
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ONSEMI
23+
SSOP-8
6893
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ON
09+
CASE120
5500
原装无铅,优势热卖
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24+
22963
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ON
QFN
1670
正品原装--自家现货-实单可谈
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VISHAY
23+
SMD
8560
受权代理!全新原装现货特价热卖!
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更多NTH供应商 更新时间2025-7-18 16:06:00