N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 75A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(TYP)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Server Power Supplies · Industrial Power Supplies

文件：347.2 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

文件：334.99 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

文件：334.99 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos

文件：303.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost

文件：304.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos

文件：303.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost

文件：304.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3, TO-247-3L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 139 nC) • Low Effective Output Capacitance (Coss = 141 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Typical Applic

文件：272.3 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L

Features • Typical RDS(on) = 23 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 69 nC) • High Speed Switching with Low Capacitance (Coss = 153 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection) Appli

文件：460.04 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Batterry Chargers

文件：377.26 Kbytes 页数：4 Pages

ISC

无锡固电