SiC N-Channel MOSFET

FEATURES ·Typ. RDS(on) = 960 mΩ ·100 Avalanche Tested ·RoHS Compliant APPLICATIONS ·Solar Inverters ·Electric Vehicle Charging Stations ·Electric Storing Systems ·UPS

文件：415.07 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Features  Typ. RDS(on) = 960 m  Ultra Low Gate Charge (typ. QG(tot) = 14 nC)  Low Effective Output Capacitance (typ. Coss = 11 pF)  100 Avalanche Tested  RoHS Compliant Typical Applications  Solar Inverters  Electric Vehicle Charging Stations  Electric Storing Systems  SMPS (

文件：353.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos

文件：303.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：306.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：308.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost

文件：304.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：306.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

文件：308.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

NTC Thermistors, Surface Mount Chip

FEATURES • Extended resistance values available in standard sizes • Wraparound Ni barrier terminations with 100 Sn • Allows design flexibility for use with hybrid   circuitry • High-density monolithic construction with glass overcoat • Sn90Pb10 plated terminations version available • Compli

文件：98.41 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世科技

NTC Thermistors, SMD 0402, 0603, 0805, 1206 Chip

FEATURES • Extended resistance values available in standard sizes • Wraparound Ni barrier terminations with 100 Sn • High-density monolithic construction with glass overcoat • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Tempe

文件：93.95 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世科技