NTHL060N090SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecond

NTHL060N090SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecond

NTHL061N60S5H

Marking：T061N60S5H；Package：TO247；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247 600 V, 61 m, 41 A

Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features 650V@TJ=150C/Typ.RDS(on)=48.8m 100AvalancheTested Pb−Free,HalogenFree/BFRFreeandRoHSCompliant Applic

NTHL070N120M3S

Marking：HL070N120M3S；Package：TO-247-3L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-3L

Features •Typ.RDS(on)=65m@VGS=18V •UltraLowGateCharge(QG(tot)=57nC) •HighSpeedSwitchingwithLowCapacitance(Coss=57pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalA

NTHL075N065SC1

Silicon Carbide SiC MOSFET - 57 mohm, 650V, M2, TO-247-3L

Features •Typ.RDS(on)=57m@VGS=18V Typ.RDS(on)=75m@VGS=15V •UltraLowGateCharge(QG(tot)=61nC) •LowOutputCapacitance(Coss=107pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondle

NTHL080N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

NTHL080N120SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

NTHL080N120SC1A

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

NTHL080N120SC1A_V01

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

NTHL099N60S5

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=99mΩ(Max)@VGS=10V APPLICATIONS ·UPS ·ServerPowerSupplies ·IndustrialPowerSupplies