SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

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Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

文件：411.64 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 70 m, 31 A

Features • Typ. RDS(on) = 70 m @ VGS = 18 V Typ. RDS(on) = 95 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 50 nC) • Low Output Capacitance (Coss = 89 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Pb−Free and is RoHS Compliant Typical Applications • SMPS (Switching M

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Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

文件：357.43 Kbytes 页数：8 Pages

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Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

文件：356.61 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

文件：356.61 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

文件：357.43 Kbytes 页数：8 Pages

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丝印：HL015N065SC1；Package：TO-247；Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on sec

文件：284.57 Kbytes 页数：8 Pages

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MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247 600 V, 17 m, 75 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. Features • 650 V @ TJ = 150°C / Typ. RDS(on) = 14.3 m • 100 Avalanche Tested • Pb−Free, Halogen Free / BFR Free and RoHS Compliant Applic

文件：244.27 Kbytes 页数：7 Pages

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安森美半导体