丝印：HL015N065SC1；Package：TO-247；Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on sec

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Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • High Junction Temperature\n• Tj = 175°C\n• 100% UIL Tested\n• RoHS Compliant\n• High Speed Switching and Low Capacitance\n• 650V rated\n• Max RDS(on) = 18mΩ at Vgs = 18V, Id = 163A;

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Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exem

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MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 m, 145 A

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