MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 70 m, 31 A

Features • Typ. RDS(on) = 70 m @ VGS = 18 V Typ. RDS(on) = 95 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 50 nC) • Low Output Capacitance (Coss = 89 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Pb−Free and is RoHS Compliant Typical Applications • SMPS (Switching M

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, TO-247-4L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • TJ = 175°C\n• Ultra Low Gate Charge (Typ. Qg = 50 nC)\n• High Speed Switching with Low Capacitance (Coss = 89 pF)\n• Zero reverse recovery current of body diode\n• Kelvin Source configuration\n• Typ. RDS(on) = 70 mΩ at Vgs = 18V\n• 100% UIL Tested\n• RoHS Compliant;

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安森美半导体

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TO-247

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SOT-363

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SOT-363

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