NTH4L095N065SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, TO-247-4L数据手册ONSEMI规格书

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

特性 Features

• TJ = 175°C
• Ultra Low Gate Charge (Typ. Qg = 50 nC)
• High Speed Switching with Low Capacitance (Coss = 89 pF)
• Zero reverse recovery current of body diode
• Kelvin Source configuration
• Typ. RDS(on) = 70 mΩ at Vgs = 18V
• 100% UIL Tested
• RoHS Compliant

应用 Application

• Telecommunication
• Cloud system
• Industrial