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NTH4L013N120M3S中文资料Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L数据手册ONSEMI规格书
NTH4L013N120M3S规格书详情
描述 Description
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
特性 Features
• TO-247-4L Package with Kelvin source configuration
• Excellent FOM [ = Rdson * Eoss ]
• Ultra Low Gate Charge (QG(tot) = 254 nC)
• High Speed Switching with Low Capacitance (Coss = 262 pF)
• 15V to 18V Gate Drive
• New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses
• 100% Avalanche Tested
• Halide Free and RoHS Compliant
应用 Application
• Industrial
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON-SEMI |
22+ |
N/A |
450 |
只做原装正品 |
询价 | ||
ON(安森美) |
2447 |
TO-247-4 |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
ON |
23+ |
TO-247 |
3000 |
全新原装正品!一手货源价格优势! |
询价 | ||
ONSEMI/安森美 |
24+ |
原封装 |
29823 |
郑重承诺只做原装进口现货 |
询价 | ||
ON |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
onsemi |
23+ |
TO-247-4L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON(安森美) |
23+ |
TO-247-4 |
12378 |
公司只做原装正品,假一赔十 |
询价 |
