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首页>NTH4L015N065SC1>芯片详情
NTH4L015N065SC1_ONSEMI/安森美半导体_Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L万三科技
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产品属性
- 类型
描述
- 制造商编号
:NTH4L015N065SC1
- 生产厂家
:安森美
- Pb-free
:Pb
- AEC Qualified
:A
- Halide free
:H
- PPAP Capablee
:P
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Single
- Blocking Voltage BVDSS (V)
:650
- ID(max) (A)
:164
- RDS(on) Typ @ 25°C (mΩ)
:15.6
- Qg Total (C)
:251
- Output Capacitance (C)
:397
- Tj Max (°C)
:175
- Package Type
:TO-247-4
供应商
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