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NTH4L025N065SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L数据手册ONSEMI规格书
NTH4L025N065SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Tj = 175°C
• High reliability at high temperature ambient
• Ultra Low Gate Charge (Typ. Qg = 164 nC)
• Low switching loss
• High Speed Switching with Low Capacitance (Coss = 278 pF)
• Low switching loss
• Zero reverse recovery current of body diode
• Higher system reliability in LLC and Phase shift full bridge circuit
• Kelvin Source configuration
• Lower switching loss and lower Vgs oscillation
• Max RDS(on) = 19 mΩ at Vgs = 18V
• 100% UIL Tested
• RoHS Compliant
应用 Application
• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247-4 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
ON(安森美) |
2447 |
TO-247-4 |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
ON |
23+ |
TO-247 |
3000 |
全新原装正品!一手货源价格优势! |
询价 | ||
onsemi |
23+ |
TO-247-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON(安森美) |
23+ |
9417 |
公司只做原装正品,假一赔十 |
询价 | |||
ON/安森美 |
2130+ |
TO-247 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
