Silicon Carbide SiC MOSFET - 19 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level in

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ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • Tj = 175°C\n• High reliability at high temperature ambient\n• Ultra Low Gate Charge (Typ. Qg = 164 nC)\n• Low switching loss\n• High Speed Switching with Low Capacitance (Coss = 278 pF)\n• Low switching loss\n• Zero reverse recovery current of body diode\n• Higher system reliability in LLC and Pha;

ONSEMI

安森美半导体

TO-247

ON/安森美

上传：深圳市周芯芯半导体有限公司

SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司

SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司