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NTH4L020N120SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L数据手册ONSEMI规格书
NTH4L020N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
• Typical RDS(on) = 20mΩ
• High Speed Switching and Low Capacitance
• Coss = 258pF
• 100% UIL Tested
• 1200V Rated
应用 Application
• PFC
• Boost Inverter
• Motor Drives
• UPS
• Solar Units
• Charging Stations
技术参数
- 制造商编号
：NTH4L020N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：+25/-15
- VGS(th) Max (V)
：4.3
- ID Max (A)
：102
- PD Max (W)
：510
- Ciss Typ (pF)
：2943
- Package Type
：TO-247-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
onsemi(安森美) |
24+ |
TO-247-4 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI/安森美 |
24+ |
原封装 |
29823 |
郑重承诺只做原装进口现货 |
询价 | ||
ON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
ON-SEMI |
22+ |
N/A |
450 |
只做原装正品 |
询价 | ||
ON(安森美) |
25+ |
TO-247-4 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON(安森美) |
2447 |
TO-247-4 |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
onsemi(安森美) |
2025+ |
TO-247-4 |
55740 |
询价 |
