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NTH4L045N065SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L数据手册ONSEMI规格书
NTH4L045N065SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• High Junction Temperature
• Tj = 175C
• 100% UIL Tested
• RoHS Compliant
• High Speed Switching and Low Capacitance
• 650V rated
• Max RDS(on) = 52.8 mΩ at Vgs = 18V, Id = 20A
应用 Application
• DC-DC Converter
• Boost Inverter
• UPS
• Solar
• Power Supply
技术参数
- 制造商编号
：NTH4L045N065SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- AEC Qualified
：A
- Halide free
：H
- PPAP Capablee
：P
- Status
：Product Preview
- Channel Polarity
：N-Channel
- Configuration
：Single
- Blocking Voltage BVDSS (V)
：650
- ID(max) (A)
：66
- RDS(on) Typ @ 25°C (mΩ)
：43.8
- Qg Total (C)
：85
- Output Capacitance (C)
：156
- Tj Max (°C)
：175
- Package Type
：TO-247-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
7800 |
全新、原装 |
询价 | |||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
ONSEMI |
22+ |
SMD |
8550 |
询价 | |||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
onsemi/安森美 |
22+ |
原装封装 |
450 |
品质保证,信誉至上 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247-4 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
onsemi |
23+ |
TO-247-4L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ON(安森美) |
25+ |
TO-247-4L |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
onsemi |
23+ |
53048 |
加QQ:78517935原装正品有单必成 |
询价 |
