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型号	下载订购	功能描述	制造商上传企业	LOGO
NTH4L160N120SC1	文件：356.61 Kbytes Page：8 Pages	Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ 文件：356.61 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTH4L160N120SC1	文件：357.43 Kbytes Page：8 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ 文件：357.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTH4L160N120SC1	文件：277.86 Kbytes Page：8 Pages	MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A 文件：277.86 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTH4L160N120SC1	文件：300 bytes Page：1 Pages	Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • High Junction Temperature\n• Tj = 175°C\n• 1200V\n• High UIS, Surge Current, and Avalanche;	ONSEMI 安森美半导体	ONSEMI
NTH4L160N120SC1_V01	文件：356.61 Kbytes Page：8 Pages	Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ 文件：356.61 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTH4L160N120SC1_V02	文件：357.43 Kbytes Page：8 Pages	Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ 文件：357.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
V(BR)DSS Min (V)：
1200
VGS Max (V)：
20
VGS(th) Max (V)：
2.83
ID Max (A)：
27.3
PD Max (W)：
185
Ciss Typ (pF)：
690
Package Type：
TO-247-4

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	NTH4L160N120SC1	onsemi(安森美)	24+	TO-247-4	8110	支持大陆交货,美金交易。原装现货库存。	询价
深圳市达恩科技有限公司	NTH4L160N120SC1	ON	24+	NA	3000	进口原装假一罚十现货	询价
深圳市恒科翔业电子有限公司	NTH4L160N120SC1	ON/安森美	22+		24000	原装正品现货,实单可谈,量大价优	询价
深圳市亿联芯电子科技有限公司	NTH4L160N120SC1	onsemi	23+	TO-247-4	1356	原厂正品现货SiC MOSFET全系列	询价
深圳市中联芯电子有限公司	NTH4L160N120SC1	ONSEMI	23+	MOSFET	5864	原装原标原盒给价就出全网最低	询价
深圳市慧拓科技有限公司	NTH4L160N120SC1	ON Semiconductor	23+/22+		859	原装进口订货7-10个工作日	询价
现代芯城（深圳）科技有限公司	NTH4L160N120SC1		24+	N/A	56000	一级代理-主营优势-实惠价格-不悔选择	询价
北京天阳诚业科贸有限公司	NTH4L160N120SC1	ON SEMICONDUCTOR	24+	con	35960	查现货到京北通宇商城	询价
深圳市亚泰盈科电子有限公司	NTH4L160N120SC1	onsemi(安森美)	2025+	TO-247-4	55740		询价
广州市睿科电子科技有限公司	NTH4L160N120SC1	onsemi	21+		130	只做原装,优势渠道 ,欢迎实单联系	询价

更多NTH4L160N120SC1供应商更新时间2025-10-4 16:12:00

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