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NTH4L160N120SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L数据手册ONSEMI规格书
NTH4L160N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• High Junction Temperature
• Tj = 175°C
• 1200V
• High UIS, Surge Current, and Avalanche
应用 Application
• PFC
• Boost Inverter
• PV Charging
• Industrial Power Supply
• Solar Inverter
技术参数
- 制造商编号
：NTH4L160N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：20
- VGS(th) Max (V)
：2.83
- ID Max (A)
：27.3
- PD Max (W)
：185
- Ciss Typ (pF)
：690
- Package Type
：TO-247-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON(安森美) |
2511 |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
onsemi |
23+ |
TO-247-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
THAILAND |
23+ |
SOP-8 |
39630 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
PULSE |
23+ |
SMD8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
PULSE |
25+23+ |
na |
37995 |
绝对原装正品全新进口深圳现货 |
询价 | ||
PULSE/普思 |
2450+ |
SOP |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
PULSE |
25+ |
SMD8 |
2568 |
原装优势!绝对公司现货 |
询价 | ||
PULSE |
23+ |
NA |
5606 |
专做原装正品,假一罚百! |
询价 |
