Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typica

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Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

文件：350.4 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide SiC MOSFET - 33 mohm, 650V, M2, TO-247-4L

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

文件：325.79 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

文件：350.4 Kbytes 页数：8 Pages

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Silicon Carbide SiC MOSFET - 44 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

文件：319.24 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide SiC MOSFET - 60 mohm, 900V, M2, TO-247-4L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le

文件：895.48 Kbytes 页数：7 Pages

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丝印：H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 65 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 57 nC) • High Speed Switching with Low Capacitance (Coss = 57 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical A

文件：356.3 Kbytes 页数：8 Pages

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Silicon Carbide SiC MOSFET - 57 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 57 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 61 nC) • Low Output Capacitance (Coss = 107 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le

文件：320 Kbytes 页数：8 Pages

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Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

文件：411.64 Kbytes 页数：8 Pages

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

文件：409.41 Kbytes 页数：8 Pages

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