Silicon Carbide SiC MOSFET - 44 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • TJ = 175°C\n• High reliability at high temperature ambient\n• Ultra Low Gate Charge (Typ. Qg = 74 nC)\n• Low switching loss\n• High Speed Switching with Low Capacitance (Coss = 133 pF)\n• Low switching loss\n• Zero reverse recovery current of body diode\n• Higher system reliability in LLC and Phas;

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安森美半导体

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TO-247

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SOT-363

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SOT-363

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