NTH4L060N065SC1数据手册ONSEMI中文资料规格书

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

特性 Features

• TJ = 175°C
• High reliability at high temperature ambient
• Ultra Low Gate Charge (Typ. Qg = 74 nC)
• Low switching loss
• High Speed Switching with Low Capacitance (Coss = 133 pF)
• Low switching loss
• Zero reverse recovery current of body diode
• Higher system reliability in LLC and Phase shift full bridge circuit
• Kelvin Source configuration
• Lower switching loss and lower Vgs oscillation
• Max RDS(on) = 44 mΩ at Vgs = 18V
• 100% UIL Tested
• RoHS Compliant

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS