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NTH4L060N065SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L数据手册ONSEMI规格书
NTH4L060N065SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• TJ = 175°C
• High reliability at high temperature ambient
• Ultra Low Gate Charge (Typ. Qg = 74 nC)
• Low switching loss
• High Speed Switching with Low Capacitance (Coss = 133 pF)
• Low switching loss
• Zero reverse recovery current of body diode
• Higher system reliability in LLC and Phase shift full bridge circuit
• Kelvin Source configuration
• Lower switching loss and lower Vgs oscillation
• Max RDS(on) = 44 mΩ at Vgs = 18V
• 100% UIL Tested
• RoHS Compliant
应用 Application
• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON SEMICONDUCTOR |
23+ |
NTH4L060N065SC1 |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON(安森美) |
2511 |
TO-247-4 |
8790 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
onsemi |
23+ |
TO-247-4L |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
ON |
23+ |
TO247 |
30 |
正规渠道,只有原装! |
询价 | ||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON |
23+ |
TO-247 |
3000 |
全新原装正品!一手货源价格优势! |
询价 | ||
onsemi(安森美) |
24+ |
TO-247-4 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 |
