Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

文件：764.08 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

文件：764.08 Kbytes 页数：7 Pages

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安森美半导体

丝印：T061N60S5H；Package：TO247；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247 600 V, 61 m, 41 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. Features  650 V @ TJ = 150C / Typ. RDS(on) = 48.8 m  100 Avalanche Tested  Pb−Free, Halogen Free / BFR Free and RoHS Compliant Applic

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安森美半导体

丝印：HL070N120M3S；Package：TO-247-3L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-3L

Features • Typ. RDS(on) = 65 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 57 nC) • High Speed Switching with Low Capacitance (Coss = 57 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical A

文件：227.71 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide SiC MOSFET - 57 mohm, 650V, M2, TO-247-3L

Features • Typ. RDS(on) = 57 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 61 nC) • Low Output Capacitance (Coss = 107 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le

文件：283.42 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：365.42 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：365.42 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：363.09 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

文件：363.09 Kbytes 页数：7 Pages

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安森美半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 33A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 99mΩ(Max)@VGS= 10V APPLICATIONS · UPS · Server Power Supplies · Industrial Power Supplies

文件：307.89 Kbytes 页数：2 Pages

ISC

无锡固电