丝印：HL070N120M3S；Package：TO-247-3L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-3L

Features • Typ. RDS(on) = 65 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 57 nC) • High Speed Switching with Low Capacitance (Coss = 57 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical A

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