Silicon Carbide SiC MOSFET - 57 mohm, 650V, M2, TO-247-3L

Features • Typ. RDS(on) = 57 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 61 nC) • Low Output Capacitance (Coss = 107 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le

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Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • TJ = 175°C\n• High reliability at high temperature ambient\n• Ultra Low Gate Charge (Typ. Qg = 61 nC)\n• Low switching loss\n• High Speed Switching with Low Capacitance (Coss = 107 pF)\n• Low switching loss\n• Zero reverse recovery current of body diode\n• Higher system reliability in LLC and Phas;

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安森美半导体

Silicon Carbide (SiC) MOSFET - 56mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 56 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 59 nC) • Low Output Capacitance (Coss = 109 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Typical Applications • Automotive On Board Char

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 56mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 56 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 59 nC) • Low Effective Output Capacitance (Coss = 109 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • S

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安森美半导体