N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 33A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 99mΩ(Max)@VGS= 10V APPLICATIONS · UPS · Server Power Supplies · Industrial Power Supplies

文件：307.89 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：T099N60S5；Package：TO-247；MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A

文件：267 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 33 A, 99 mΩ, TO-247

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits • Ultra Low Gate Charge (Typ. Qg= 48 nC)\n• Low switching loss\n• Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)\n• Low switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n• 650 V @ TJ = 150°C\n• Typ. RDS(on) = 79.2 m Ω\n• 100% Avalanche Tested\n• R;

ONSEMI

安森美半导体

ON/安森美
SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司

ON/安森美
SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司