Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：353.32 Kbytes 页数：9 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：357.6 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：265.22 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：253 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：265.22 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：357.6 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

文件：360.84 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typica

文件：361.86 Kbytes 页数：8 Pages

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安森美半导体

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：361.02 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

文件：360.84 Kbytes 页数：8 Pages

ONSEMI

安森美半导体