Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

文件：360.84 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typica

文件：361.86 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：361.02 Kbytes 页数：3 Pages

ISC

无锡固电

MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A

文件：282.35 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A\n• Typical RDS(on) = 40mΩ\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested\n• 1200V Rated;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

文件：360.84 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typica

文件：361.86 Kbytes 页数：8 Pages

ONSEMI

安森美半导体