NTH4L080N120SC1中文资料安森美半导体数据手册PDF规格书

厂商型号	NTH4L080N120SC1
功能描述	Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
文件大小	409.41 Kbytes
页面数量	8 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-4 20:00:00
人工找货	NTH4L080N120SC1价格和库存，欢迎联系客服免费人工找货

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

特性 Features

• 1200 V @ TJ = 175°C

• Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A

• High Speed Switching with Low Capacitance

• 100 Avalanche Tested

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Applications

• Industrial Motor Drive

• UPS

• Boost Inverter

• PV Charger