MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247 600 V, 17 m, 75 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. Features • 650 V @ TJ = 150°C / Typ. RDS(on) = 14.3 m • 100 Avalanche Tested • Pb−Free, Halogen Free / BFR Free and RoHS Compliant Applic

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ONSEMI

安森美半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 75A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(TYP)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Server Power Supplies · Industrial Power Supplies

文件：347.2 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits • Ultra Low Gate Charge (Typ. Qg = 265 nC)\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 322 pF)\n• Fast switching performance with robust body diode\n• 650 V @ TJ = 150°C\n• Typ. RDS(on) = 14.3 m Ω\n• 100% Avalanche Tested\n• RoHS Compliant\n• Internal Gate Resistance: 1.07 Ω;

ONSEMI

安森美半导体

ON/安森美
TO-247

ON/安森美

上传：深圳市周芯芯半导体有限公司

ON/安森美
SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司