Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Features  Typ. RDS(on) = 960 m  Ultra Low Gate Charge (typ. QG(tot) = 14 nC)  Low Effective Output Capacitance (typ. Coss = 11 pF)  100 Avalanche Tested  RoHS Compliant Typical Applications  Solar Inverters  Electric Vehicle Charging Stations  Electric Storing Systems  SMPS (

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安森美半导体

SiC N-Channel MOSFET

FEATURES ·Typ. RDS(on) = 960 mΩ ·100 Avalanche Tested ·RoHS Compliant APPLICATIONS ·Solar Inverters ·Electric Vehicle Charging Stations ·Electric Storing Systems ·UPS

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无锡固电

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive. • 18V to 20V Gate Drive\n• New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses\n• 100% Avalanche Tested;

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700V, M1, D2PAK-7L

Features • Typ. RDS(on) = 960 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Features • Typ. RDS(on) = 960 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

文件：354.33 Kbytes 页数：8 Pages

ONSEMI

安森美半导体