Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

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安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 200 nC) • Low Effective Output Capacitance (typ. Coss = 295 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Complia

文件：327.54 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 196 nC) • Low Effective Output Capacitance (typ. Coss = 296 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit

文件：336.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • Low Effective Output Capacitance (Coss = 295 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second lev

文件：325.98 Kbytes 页数：8 Pages

ONSEMI

安森美半导体