NVBG020N090SC1_V01

Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=200nC) •LowEffectiveOutputCapacitance(typ.Coss=295pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSComplia

NTBG020N090SC1_V01

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,900V,M2,D2PAK-7L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=200nC) •LowEffectiveOutputCapacitance(Coss=295pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlev

NTHL020N090SC1_V01

SiliconCarbide(SiC)MOSFET–EliteSiC,20mohm,900V,M2,TO-247-3L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint

NVHL020N090SC1_V01

SiliconCarbide(SiC)MOSFET–20mohm,900V,M2,TO-247-3L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=196nC) •LowEffectiveOutputCapacitance(typ.Coss=296pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwit

NVD5865NLT4G

VB
TO-252

VB