Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3, TO-247-3L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 139 nC) • Low Effective Output Capacitance (Coss = 141 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Typical Applic

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Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. • TO247-4LD package for low common source inductance\n• 15V to 18V Gate Drive\n• New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses\n• 100% Avalanche Tested\n• Improved robustness to unexpected incoming voltage spikes or ringing\n;

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Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 148 nC) • High Speed Switching with Low Capacitance (Coss = 148 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

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MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 148 nC) • High Speed Switching with Low Capacitance (Coss = 148 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

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安森美半导体