丝印：H4L020090SC1；Package：TO247-4L；Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inter

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster op • High Junction Temperature\n• 175°C\n• 900V Rating\n• 100% UIL Tested\n• RoHS Compliant;

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安森美半导体

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TO-247

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SOT-363

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