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NTH4L020N090SC1中文资料Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L数据手册ONSEMI规格书
NTH4L020N090SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• High Junction Temperature
• 175°C
• 900V Rating
• 100% UIL Tested
• RoHS Compliant
应用 Application
• DC-DC Converter
• Boost Inverter
• UPS
• Solar
• Power Devices
技术参数
- 制造商编号
：NTH4L020N090SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Product Preview
- Channel Polarity
：N-Channel
- Configuration
：Single
- Blocking Voltage BVDSS (V)
：900
- ID(max) (A)
：148
- RDS(on) Typ @ 25°C (mΩ)
：20
- Qg Total (C)
：232
- Output Capacitance (C)
：280
- Tj Max (°C)
：175
- Package Type
：TO-247-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO2474 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ONSEMI/安森美 |
24+ |
原封装 |
29823 |
郑重承诺只做原装进口现货 |
询价 | ||
ON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
ON-SEMI |
22+ |
N/A |
450 |
只做原装正品 |
询价 | ||
ON(安森美) |
25+ |
TO-247-4 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON(安森美) |
2447 |
TO-247-4 |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
onsemi |
2025+ |
TO-247-4L |
55740 |
询价 |
