Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L

Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−

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ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 13.5mohm, 750V, M2, TO247−4L

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster o • TJ = 175°C\n• High Speed Switching with Low Capacitance (Coss = 365 pF)\n• Kelvin Source configuration\n• 100% UIL Tested\n• RoHS Compliant;

ONSEMI

安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 750 V, 13.5 m, 140 A

Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable Typical Applications • Automotive On Board C

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安森美半导体

TO-247

ON/安森美

上传：深圳市周芯芯半导体有限公司

SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司