功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，30 A，110 mΩ，TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 58 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode)\n;

ONSEMI

安森美半导体

丝印：NTHL110N65S3F；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

文件：428 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET - Power, N-Channel, SUPERFET III, FRFET

文件：303.37 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET ?밣ower, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

文件：377.02 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET ?밣ower, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

文件：308.5 Kbytes 页数：10 Pages

ONSEMI

安森美半导体