功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，30 A，110 mΩ，TO-220F

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 62 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode)\n;

ONSEMI

安森美半导体

丝印：NTPF110N65S3HF；Package：TO-220；MOSFET ?밣ower, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

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ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, D2PAK 650 V, 110 m, 30 A

Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

文件：242.93 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, D2PAK-7L 650 V, 110 m, 30 A

Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide supe

文件：235.91 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Provide superior sw

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ISC

无锡固电