isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Provide superior sw

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ISC

无锡固电

丝印：NVHL110N65S3F；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

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ONSEMI

安森美半导体

丝印：NVHL110N65S3HF；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

Description SUPERFET III MOSFET is ONSemiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, prov

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ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，SUPERFET® III，FRFET®，650 V，30 A，110 mΩ，TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 58 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = TBD pF)\n• Lower switching loss\n• AEC−Q101 Qualified and PPAP Capable\n• AEC−Q101 Qualified and PP;

ONSEMI

安森美半导体

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247 fast recovery

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • Best in Class body diode\n• Lower over shoot during reverse recovery\n• Internal Rg\n• Low switching noise\n• Low Lower RDS (ON)/Same Packages\n• High System Reliability\n• Lower FOM (RDS (ON) max X RDS (ON) max X EOSS)\n• Ease of use for fast design-in\n• Internal Zener/650V BVdss\n• High Power D;

ONSEMI

安森美半导体