isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 75A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27.4mΩ(Max)@VGS= 10V DESCRIPTION · UPS · Telecom / Server Power Supplies

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ISC

无锡固电

MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

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ONSEMI

安森美半导体

丝印：NTH027N65S3F；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

文件：515.78 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，75 A，27.4 mΩ，TO-247

SuperFET® III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 259 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode);

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安森美半导体