NTH027N65S3F中文资料功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，75 A，27.4 mΩ，TO-247数据手册ONSEMI规格书

描述 Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior switching
performance, and withstand extreme dv/dt rate.
Consequently, SuperFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SuperFET III FRFET® MOSFET’s optimized reverse recovery
performance of body diode can remove additional component
and improve system reliability.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 259 nC)
• Lower switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
• Lower switching loss
• Excellent body diode performance (low Qrr, robust body diode)
• Higher system reliability in LLC and Phase shift full bridge circuit
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• RoHS Compliant
• 100% Avalanche Tested
• Typ. RDS(on) = 23 mΩ

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS