MOSFET, Power, N-Channel, SUPERFET® III, FRFET®, 650 V, 46 A, 65 mΩ, TO-247

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior s • 700 V @ TJ = 150 oC\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 98 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 876 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode)\n;

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丝印：NTHL065N65S3HF；Package：TO-247；MOSFET ??Power, N-Channel, SUPERFET III, FRFET

文件：427.68 Kbytes 页数：10 Pages

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MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 46 A, 65 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：832.18 Kbytes 页数：10 Pages

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安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 46 A, 65 m

文件：434.84 Kbytes 页数：10 Pages

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安森美半导体