丝印：NTHL040N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 40 m, 60 A

文件：242.9 Kbytes 页数：7 Pages

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安森美半导体

丝印：NTHL040N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel 1200 V, 40 m, 60 A

文件：242.9 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications •

文件：312.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications •

文件：313.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications •

文件：312.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications •

文件：313.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体